IPP05CN10L G Datasheet
IPP05CN10L G Datasheet
Total Pages: 9
Size: 324.26 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPP05CN10L G
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 163nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
