IPI80N04S4L04AKSA1 Datasheet
IPI80N04S4L04AKSA1 Datasheet
Total Pages: 9
Size: 159.72 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPI80N04S4L04AKSA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 4690pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
