IPI70N10S3L12AKSA1 Datasheet
IPI70N10S3L12AKSA1 Datasheet
Total Pages: 9
Size: 160.73 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPI70N10S3L12AKSA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.1mOhm @ 70A, 10V Vgs(th) (Max) @ Id 2.4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5550pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
