IPD80R2K0P7ATMA1 Datasheet
IPD80R2K0P7ATMA1 Datasheet
Total Pages: 13
Size: 964.35 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPD80R2K0P7ATMA1
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Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V Vgs(th) (Max) @ Id 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 175pF @ 500V FET Feature - Power Dissipation (Max) 24W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
