IPD60R600P7ATMA1 Datasheet
IPD60R600P7ATMA1 Datasheet
Total Pages: 14
Size: 1,082.38 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPD60R600P7ATMA1
|
Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 363pF @ 400V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
