IPD06P005LATMA1 Datasheet
IPD06P005LATMA1 Datasheet
Total Pages: 11
Size: 1,008.2 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPD06P005LATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs 13.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 30V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
