IPD053N06N3GBTMA1 Datasheet
IPD053N06N3GBTMA1 Datasheet
Total Pages: 9
Size: 615.86 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPD053N06N3GBTMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 58µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 30V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
