IPB06P001LATMA1 Datasheet
IPB06P001LATMA1 Datasheet
Total Pages: 11
Size: 1,031.02 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPB06P001LATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2V @ 5.55mA Gate Charge (Qg) (Max) @ Vgs 281nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8500pF @ 30V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
