IPB041N04NGATMA1 Datasheet
IPB041N04NGATMA1 Datasheet
Total Pages: 10
Size: 687.58 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
IPB041N04NGATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.1mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 45µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 20V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
