HN4A06J(TE85L Datasheet
HN4A06J(TE85L Datasheet
Total Pages: 4
Size: 308.25 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
HN4A06J(TE85L,F)
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP (Dual) Matched Pair, Common Emitter Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-74A, SOT-753 Supplier Device Package SMV |
