HGTP12N60C3D Datasheet
HGTP12N60C3D Datasheet
Total Pages: 10
Size: 273.21 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGTP12N60C3D
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 24A Current - Collector Pulsed (Icm) 96A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A Power - Max 104W Switching Energy 380µJ (on), 900µJ (off) Input Type Standard Gate Charge 48nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 40ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |