HGTP12N60C3 Datasheet
HGTP12N60C3 Datasheet
Total Pages: 7
Size: 172.1 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGTP12N60C3
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 24A Current - Collector Pulsed (Icm) 96A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 12A Power - Max 104W Switching Energy 380µJ (on), 900µJ (off) Input Type Standard Gate Charge 48nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
