HGTD7N60C3S9A Datasheet
HGTD7N60C3S9A Datasheet
Total Pages: 10
Size: 285.72 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGTD7N60C3S9A
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 14A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A Power - Max 60W Switching Energy 165µJ (on), 600µJ (off) Input Type Standard Gate Charge 23nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252AA |
