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HGT1S3N60A4DS9A Datasheet

HGT1S3N60A4DS9A Datasheet
Total Pages: 9
Size: 113.52 KB
ON Semiconductor
This datasheet covers 1 part numbers: HGT1S3N60A4DS9A
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HGT1S3N60A4DS9A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

17A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 3A

Power - Max

70W

Switching Energy

37µJ (on), 25µJ (off)

Input Type

Standard

Gate Charge

21nC

Td (on/off) @ 25°C

6ns/73ns

Test Condition

390V, 3A, 50Ohm, 15V

Reverse Recovery Time (trr)

29ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB