HGT1S20N35G3VLS Datasheet
HGT1S20N35G3VLS Datasheet
Total Pages: 7
Size: 247.24 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGT1S20N35G3VLS
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 375V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.8V @ 5V, 20A Power - Max 150W Switching Energy - Input Type Logic Gate Charge 28.7nC Td (on/off) @ 25°C -/15µs Test Condition 300V, 10A, 25Ohm, 5V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
