HFA3102B96 Datasheet
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Manufacturer Renesas Electronics America Inc. Series - Transistor Type 6 NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 10GHz Noise Figure (dB Typ @ f) 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain 12.4dB ~ 17.5dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 3V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SOIC |
Manufacturer Renesas Electronics America Inc. Series - Transistor Type 6 NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 10GHz Noise Figure (dB Typ @ f) 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain 12.4dB ~ 17.5dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 3V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SOIC |
Manufacturer Renesas Electronics America Inc. Series - Transistor Type 6 NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 10GHz Noise Figure (dB Typ @ f) 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain 12.4dB ~ 17.5dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 3V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SOIC |
