HAT2131R-EL-E Datasheet
HAT2131R-EL-E Datasheet
Total Pages: 9
Size: 137.07 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
HAT2131R-EL-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 350V Current - Continuous Drain (Id) @ 25°C 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 3Ohm @ 450mA, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
