HAT1069C-EL-E Datasheet
HAT1069C-EL-E Datasheet
Total Pages: 6
Size: 173.77 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
HAT1069C-EL-E
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 52mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package 6-CMFPAK Package / Case 6-SMD, Flat Leads |
