HAF1002-90STL-E Datasheet
HAF1002-90STL-E Datasheet
Total Pages: 11
Size: 202.14 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
HAF1002-90STL-E
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 90mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) +3V, -16V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-LDPAK Package / Case SC-83 |
