H5N2522LSTL-E Datasheet
H5N2522LSTL-E Datasheet
Total Pages: 7
Size: 84.08 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
H5N2522LSTL-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-LDPAK Package / Case SC-83 |
