GP2M011A090NG Datasheet
GP2M011A090NG Datasheet
Total Pages: 5
Size: 591.23 KB
Global Power Technologies Group
This datasheet covers 1 part numbers:
GP2M011A090NG
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Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 25V FET Feature - Power Dissipation (Max) 416W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |
