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GB10MPS17-247 Datasheet

GB10MPS17-247 Datasheet
Total Pages: 7
Size: 548.3 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GB10MPS17-247
GB10MPS17-247 Datasheet Page 1
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GB10MPS17-247

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1700V

Current - Average Rectified (Io)

50A (DC)

Voltage - Forward (Vf) (Max) @ If

1.8V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

12µA @ 1700V

Capacitance @ Vr, F

669pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247-2

Operating Temperature - Junction

-55°C ~ 175°C