Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GB02SLT12-214 Datasheet

GB02SLT12-214 Datasheet
Total Pages: 6
Size: 409.41 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GB02SLT12-214
GB02SLT12-214 Datasheet Page 1
GB02SLT12-214 Datasheet Page 2
GB02SLT12-214 Datasheet Page 3
GB02SLT12-214 Datasheet Page 4
GB02SLT12-214 Datasheet Page 5
GB02SLT12-214 Datasheet Page 6
GB02SLT12-214

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

2A (DC)

Voltage - Forward (Vf) (Max) @ If

1.8V @ 1A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

50µA @ 1200V

Capacitance @ Vr, F

131pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-214AA, SMB

Supplier Device Package

DO-214AA

Operating Temperature - Junction

-55°C ~ 175°C