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GA35XCP12-247 Datasheet

GA35XCP12-247 Datasheet
Total Pages: 5
Size: 408.05 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GA35XCP12-247
GA35XCP12-247 Datasheet Page 1
GA35XCP12-247 Datasheet Page 2
GA35XCP12-247 Datasheet Page 3
GA35XCP12-247 Datasheet Page 4
GA35XCP12-247 Datasheet Page 5
GA35XCP12-247

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

35A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 35A

Power - Max

-

Switching Energy

2.66mJ (on), 4.35mJ (off)

Input Type

Standard

Gate Charge

50nC

Td (on/off) @ 25°C

-

Test Condition

800V, 35A, 22Ohm, 15V

Reverse Recovery Time (trr)

36ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AB