GA10SICP12-263 Datasheet
GA10SICP12-263 Datasheet
Total Pages: 13
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GeneSiC Semiconductor
This datasheet covers 1 part numbers:
GA10SICP12-263
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 100mOhm @ 10A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V FET Feature - Power Dissipation (Max) 170W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
