GA100JT12-227 Datasheet
GA100JT12-227 Datasheet
Total Pages: 12
Size: 1,387.62 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers:
GA100JT12-227
|
Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 10mOhm @ 100A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 800V FET Feature - Power Dissipation (Max) 535W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227 Package / Case SOT-227-4, miniBLOC |
