GA05JT01-46 Datasheet
GA05JT01-46 Datasheet
Total Pages: 11
Size: 1,180.74 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers:
GA05JT01-46
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 240mOhm @ 5A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Through Hole Supplier Device Package TO-46 Package / Case TO-46-3 |
