GA04JT17-247 Datasheet
GA04JT17-247 Datasheet
Total Pages: 12
Size: 1,359.94 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers:
GA04JT17-247
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 4A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 480mOhm @ 4A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 106W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AB Package / Case TO-247-3 |
