FJP5021OTU Datasheet
|
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 500V Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 600mA, 5V Power - Max 50W Frequency - Transition 18MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
