FJN598JCBU Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100µA @ 5V Current Drain (Id) - Max 1mA Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V Resistance - RDS(On) - Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100µA @ 5V Current Drain (Id) - Max 1mA Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V Resistance - RDS(On) - Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100µA @ 5V Current Drain (Id) - Max 1mA Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V Resistance - RDS(On) - Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100µA @ 5V Current Drain (Id) - Max 1mA Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V Resistance - RDS(On) - Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100µA @ 5V Current Drain (Id) - Max 1mA Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V Resistance - RDS(On) - Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100µA @ 5V Current Drain (Id) - Max 1mA Voltage - Cutoff (VGS off) @ Id 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V Resistance - RDS(On) - Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |