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FJN4301RBU Datasheet

FJN4301RBU Datasheet
Total Pages: 4
Size: 68.99 KB
ON Semiconductor
This datasheet covers 1 part numbers: FJN4301RBU
FJN4301RBU Datasheet Page 1
FJN4301RBU Datasheet Page 2
FJN4301RBU Datasheet Page 3
FJN4301RBU Datasheet Page 4
FJN4301RBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3