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FDR838P Datasheet

FDR838P Datasheet
Total Pages: 5
Size: 62.64 KB
ON Semiconductor
This datasheet covers 1 part numbers: FDR838P
FDR838P Datasheet Page 1
FDR838P Datasheet Page 2
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FDR838P Datasheet Page 5
FDR838P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

17mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-8

Package / Case

8-LSOP (0.130", 3.30mm Width)