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FDN361BN Datasheet

FDN361BN Datasheet
Total Pages: 7
Size: 247.08 KB
ON Semiconductor
This datasheet covers 1 part numbers: FDN361BN
FDN361BN Datasheet Page 1
FDN361BN Datasheet Page 2
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FDN361BN Datasheet Page 7
FDN361BN

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

193pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT-3

Package / Case

TO-236-3, SC-59, SOT-23-3