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FDMC86160ET100 Datasheet

FDMC86160ET100 Datasheet
Total Pages: 8
Size: 337.24 KB
ON Semiconductor
This datasheet covers 1 part numbers: FDMC86160ET100
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FDMC86160ET100 Datasheet Page 8
FDMC86160ET100

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1290pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 65W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power33

Package / Case

8-PowerWDFN