FDM606P Datasheet
FDM606P Datasheet
Total Pages: 12
Size: 322.98 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FDM606P
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Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V FET Feature - Power Dissipation (Max) 1.92W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP, MicroFET (3x2) Package / Case 8-SMD, Flat Lead Exposed Pad |
