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FDG6306P Datasheet

FDG6306P Datasheet
Total Pages: 5
Size: 276.63 KB
ON Semiconductor
This datasheet covers 1 part numbers: FDG6306P
FDG6306P Datasheet Page 1
FDG6306P Datasheet Page 2
FDG6306P Datasheet Page 3
FDG6306P Datasheet Page 4
FDG6306P Datasheet Page 5
FDG6306P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

600mA

Rds On (Max) @ Id, Vgs

420mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

114pF @ 10V

Power - Max

300mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88 (SC-70-6)