FDFM2N111 Datasheet
FDFM2N111 Datasheet
Total Pages: 8
Size: 382.28 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FDFM2N111
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 100mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 273pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.7W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MicroFET 3x3mm Package / Case 6-WDFN Exposed Pad |
