FDC6392S Datasheet
FDC6392S Datasheet
Total Pages: 8
Size: 309.63 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FDC6392S
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Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 150mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 369pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 960mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6 |
