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FDC638APZ Datasheet

FDC638APZ Datasheet
Total Pages: 5
Size: 433.35 KB
ON Semiconductor
This datasheet covers 1 part numbers: FDC638APZ
FDC638APZ Datasheet Page 1
FDC638APZ Datasheet Page 2
FDC638APZ Datasheet Page 3
FDC638APZ Datasheet Page 4
FDC638APZ Datasheet Page 5
FDC638APZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

43mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6