FDB1D7N10CL7 Datasheet
FDB1D7N10CL7 Datasheet
Total Pages: 8
Size: 352.97 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FDB1D7N10CL7
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 268A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 15V Rds On (Max) @ Id, Vgs 1.65mOhm @ 100A, 15V Vgs(th) (Max) @ Id 4V @ 700µA Gate Charge (Qg) (Max) @ Vgs 163nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11600pF @ 50V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
