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FCPF650N80Z Datasheet

FCPF650N80Z Datasheet
Total Pages: 10
Size: 685.79 KB
ON Semiconductor
This datasheet covers 1 part numbers: FCPF650N80Z
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FCPF650N80Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1565pF @ 100V

FET Feature

-

Power Dissipation (Max)

30.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack