FCP650N80Z Datasheet
FCP650N80Z Datasheet
Total Pages: 10
Size: 667.43 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FCP650N80Z
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Manufacturer ON Semiconductor Series SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 650mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4.5V @ 800µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1565pF @ 100V FET Feature - Power Dissipation (Max) 162W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
