FCP190N65F Datasheet
FCP190N65F Datasheet
Total Pages: 10
Size: 487.5 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FCP190N65F
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Manufacturer ON Semiconductor Series FRFET®, SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 2mA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3225pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
