FCD9N60NTM Datasheet
FCD9N60NTM Datasheet
Total Pages: 10
Size: 1,243.14 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FCD9N60NTM
|
Manufacturer ON Semiconductor Series SupreMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 385mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 100V FET Feature - Power Dissipation (Max) 92.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
