EPC2203 Datasheet
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Manufacturer EPC Series Automotive, AEC-Q101, eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 1.7A Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs 0.83nC @ 5V Vgs (Max) +5.75V, -4V Input Capacitance (Ciss) (Max) @ Vds 88pF @ 50V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
