EPC2012 Datasheet
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Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 5V Vgs (Max) +6V, -5V Input Capacitance (Ciss) (Max) @ Vds 145pF @ 100V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
