ECH8309-TL-H Datasheet
ECH8309-TL-H Datasheet
Total Pages: 7
Size: 302.87 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
ECH8309-TL-H
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 16mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1780pF @ 6V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-ECH Package / Case 8-SMD, Flat Lead |
