DZ950N44KS02HPSA1 Datasheet
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 4400V Current - Average Rectified (Io) 950A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 4400V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case Module Supplier Device Package BG-PB70-1 Operating Temperature - Junction 160°C (Max) |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 4400V Current - Average Rectified (Io) 950A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 4400V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case Module Supplier Device Package BG-PB70-1 Operating Temperature - Junction 160°C (Max) |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 4400V Current - Average Rectified (Io) 950A Voltage - Forward (Vf) (Max) @ If 1.78V @ 3000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 4400V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 3600V Current - Average Rectified (Io) 950A Voltage - Forward (Vf) (Max) @ If 1.78V @ 3000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 3600V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module Operating Temperature - Junction -40°C ~ 150°C |
