DTD543EMT2L Datasheet
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Manufacturer Rohm Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 12V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 115 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 260MHz Power - Max 150mW Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package VMT3 |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 12V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 115 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 260MHz Power - Max 150mW Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package EMT3 |
