DMT2004UFDF-13 Datasheet
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 14.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 9A, 10V Vgs(th) (Max) @ Id 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V FET Feature - Power Dissipation (Max) 800mW (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 14.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 9A, 10V Vgs(th) (Max) @ Id 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V FET Feature - Power Dissipation (Max) 800mW (Ta), 12.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |
